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HSM226S
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0057-0200 Rev.2.00 Sep 15, 2006
Features
* Low reverse current, Low capacitance. * MPAK Package is suitable for high density surface mounting and high speed assembly.
Ordering Information
Type No. HSM226S Laser Mark S22 Package Name MPAK Package Code PLSP0003ZC-A
Pin Arrangement
3 1. Cathode 2 2. Anode 1 3. Cathode 1 Anode 2
2 1 (Top View)
Rev.2.00 Sep 15, 2006 page 1 of 4
HSM226S
Absolute Maximum Ratings
(Ta = 25C)
Item Repetitive peak reverse voltage Non-Repetitive peak forward surge current Forward current Junction temperature Storage temperature Notes: 1. 10 ms sine wave 1 pulse 2. Two device total Symbol VRRM IFSM * * 2 IF * Tj Tstg
1 2
Value 25 200 50 125 -55 to +125
Unit V mA mA C C
Electrical Characteristics *
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Note: Per one device. Symbol VF1 VF2 IR C Min -- -- -- -- Typ -- -- -- -- Max 0.33 0.38 450 2.80 Unit V nA pF IF = 1 mA IF = 5 mA VR = 20 V VR = 1 V, f = 1 MHz Test Condition
Rev.2.00 Sep 15, 2006 page 2 of 4
HSM226S
Main Characteristic
101 10
0
10-4 Pulse test
Forward current IF (A)
Reverse current IR (A)
10-1 10-2 10-3 10
-4
10-5 Ta=75C
Ta=75C Ta=25C
10-6
10-5 10
-6
10-7
Ta=25C
10-7 10-8 10-8 0 0.2 0.4 0.6 0.8 1.0 Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage 0 10 20 30 40
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz 10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.2.00 Sep 15, 2006 page 3 of 4
HSM226S
Package Dimensions
Package Name MPAK JEITA Package Code SC-59A RENESAS Code PLSP0003ZC-A Previous Code MPAK(D) / MPAK(D)V MASS[Typ.] 0.011g
D e
Q
c
E HE L
A
A b e
Reference Symbol Dimension in Millimeters
A e1 A1 b l1 c b2 A -- A Section Pattern of terminal position areas
A A1 b c D E e HE L b2 e1 l1 Q
Min 1.0 0 0.35 0.1 2.7 1.35 2.2 -
Nom 0.4 0.16 1.5 0.95 2.8 0.65 1.95 0.3
Max 1.3 0.1 0.5 0.26 3.1 1.65 3.0 0.55 1.05 -
Rev.2.00 Sep 15, 2006 page 4 of 4
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